High electron mobility transistor

Results: 96



#Item
41CS_ad_213x282mm_semiconductor_today_feb14.indd

CS_ad_213x282mm_semiconductor_today_feb14.indd

Add to Reading List

Source URL: www.semiconductor-today.com

Language: English - Date: 2015-02-27 10:59:53
4286 Technology focus: GaN HEMTs  First application of low-cost deposition of titanium dioxide for GaN MOS-HEMT Ultrasonic spray pyrolysis deposition has been used to create devices

86 Technology focus: GaN HEMTs First application of low-cost deposition of titanium dioxide for GaN MOS-HEMT Ultrasonic spray pyrolysis deposition has been used to create devices

Add to Reading List

Source URL: www.semiconductor-today.com

Language: English - Date: 2015-01-23 09:10:57
433-7 Nano-Gate Transistor — World’s Fastest InP-HEMT — SHINOHARA Keisuke and MATSUI Toshiaki InP-based InGaAs/InAlAs high electron mobility transistors (HEMTs) which can operate in the sub-millimeter-wave frequency

3-7 Nano-Gate Transistor — World’s Fastest InP-HEMT — SHINOHARA Keisuke and MATSUI Toshiaki InP-based InGaAs/InAlAs high electron mobility transistors (HEMTs) which can operate in the sub-millimeter-wave frequency

Add to Reading List

Source URL: www.nict.go.jp

Language: English - Date: 2013-11-21 18:46:20
444 Millimeter Wave Devices 4-1 Research Project on Millimeter-wave Semiconductor Devices Toshiaki MATSUI, Keisuke SHINOHARA, Masataka HIGASHIWAKI, and Nobumitsu HIROSE

4 Millimeter Wave Devices 4-1 Research Project on Millimeter-wave Semiconductor Devices Toshiaki MATSUI, Keisuke SHINOHARA, Masataka HIGASHIWAKI, and Nobumitsu HIROSE

Add to Reading List

Source URL: www.nict.go.jp

Language: English - Date: 2013-11-20 20:58:24
45Micro-Hall Devices Based on High-Electron-Velocity Semiconductors DISSERTATION zur Erlangung des akademischen Grades doctor rerum naturalium

Micro-Hall Devices Based on High-Electron-Velocity Semiconductors DISSERTATION zur Erlangung des akademischen Grades doctor rerum naturalium

Add to Reading List

Source URL: edoc.hu-berlin.de

Language: English - Date: 2009-10-31 18:15:34
46Investigation into intermodulation distortion in HEMTs using a quasi-2-D physical model

Investigation into intermodulation distortion in HEMTs using a quasi-2-D physical model

Add to Reading List

Source URL: eprints.whiterose.ac.uk

Language: English - Date: 2014-06-04 07:59:15
47CGH40006P  6 W, RF Power GaN HEMT Cree’s CGH40006P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general purpose, broadband solu

CGH40006P 6 W, RF Power GaN HEMT Cree’s CGH40006P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general purpose, broadband solu

Add to Reading List

Source URL: www.cree.com

Language: English - Date: 2014-07-08 11:55:04
481764  IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 60, NO. 6, JUNE 2012 A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs

1764 IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 60, NO. 6, JUNE 2012 A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs

Add to Reading List

Source URL: www.cree.com

Language: English - Date: 2014-05-08 10:01:10
49Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com

Add to Reading List

Source URL: www.hittite.com

Language: English - Date: 2014-10-21 17:38:11
50doi:[removed]j.jcrysgro[removed]

doi:[removed]j.jcrysgro[removed]

Add to Reading List

Source URL: www.nrl.navy.mil

Language: English - Date: 2013-11-22 13:48:24